3 * Daniel Engström, Omicron Ceti AB <daniel@omicron.se>.
5 * See file CREDITS for list of people who contributed to this
8 * This program is free software; you can redistribute it and/or
9 * modify it under the terms of the GNU General Public License as
10 * published by the Free Software Foundation; either version 2 of
11 * the License, or (at your option) any later version.
13 * This program is distributed in the hope that it will be useful,
14 * but WITHOUT ANY WARRANTY; without even the implied warranty of
15 * MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE. See the
16 * GNU General Public License for more details.
18 * You should have received a copy of the GNU General Public License
19 * along with this program; if not, write to the Free Software
20 * Foundation, Inc., 59 Temple Place, Suite 330, Boston,
24 /* This file is largely based on code obtned from AMD. AMD's original
25 * copyright is included below
29 * =============================================================================
31 * Copyright 1999 Advanced Micro Devices, Inc.
33 * This software is the property of Advanced Micro Devices, Inc (AMD) which
34 * specifically grants the user the right to modify, use and distribute this
35 * software provided this COPYRIGHT NOTICE is not removed or altered. All
36 * other rights are reserved by AMD.
38 * THE MATERIALS ARE PROVIDED "AS IS" WITHOUT ANY EXPRESS OR IMPLIED WARRANTY
39 * OF ANY KIND INCLUDING WARRANTIES OF MERCHANTABILITY, NONINFRINGEMENT OF
40 * THIRD-PARTY INTELLECTUAL PROPERTY, OR FITNESS FOR ANY PARTICULAR PURPOSE.
41 * IN NO EVENT SHALL AMD OR ITS SUPPLIERS BE LIABLE FOR ANY DAMAGES WHATSOEVER
42 * (INCLUDING, WITHOUT LIMITATION, DAMAGES FOR LOSS OF PROFITS, BUSINESS
43 * INTERRUPTION, LOSS OF INFORMAITON) ARISING OUT OF THE USE OF OR INABILITY
44 * TO USE THE MATERIALS, EVEN IF AMD HAS BEEN ADVISED OF THE POSSIBILITY OF
45 * SUCH DAMAGES. BECAUSE SOME JURSIDICTIONS PROHIBIT THE EXCLUSION OR
46 * LIMITATION OF LIABILITY FOR CONSEQUENTIAL OR INCIDENTAL DAMAGES, THE ABOVE
47 * LIMITATION MAY NOT APPLY TO YOU.
49 * AMD does not assume any responsibility for any errors that may appear in
50 * the Materials nor any responsibility to support or update the Materials.
51 * AMD retains the right to make changes to its test specifications at any
52 * time, without notice.
54 * So that all may benefit from your experience, please report any problems
55 * or suggestions about this software back to AMD. Please include your name,
56 * company, telephone number, AMD product requiring support and question or
57 * problem encountered.
59 * Advanced Micro Devices, Inc. Worldwide support and contact
60 * Embedded Processor Division information available at:
61 * Systems Engineering epd.support@amd.com
62 * 5204 E. Ben White Blvd. -or-
63 * Austin, TX 78741 http://www.amd.com/html/support/techsup.html
64 * ============================================================================
68 /*******************************************************************************
69 * AUTHOR : Buddy Fey - Original.
70 *******************************************************************************
74 /*******************************************************************************
75 * FUNCTIONAL DESCRIPTION:
76 * This routine is called to autodetect the geometry of the DRAM.
78 * This routine is called to determine the number of column bits for the DRAM
79 * devices in this external bank. This routine assumes that the external bank
80 * has been configured for an 11-bit column and for 4 internal banks. This gives
81 * us the maximum address reach in memory. By writing a test value to the max
82 * address and locating where it aliases to, we can determine the number of valid
85 * This routine is called to determine the number of internal banks each DRAM
86 * device has. The external bank (under test) is configured for maximum reach
87 * with 11-bit columns and 4 internal banks. This routine will write to a max
88 * address (BA1 and BA0 = 1) and then read from an address with BA1=0 to see if
89 * that column is a "don't care". If BA1 does not affect write/read of data,
90 * then this device has only 2 internal banks.
92 * This routine is called to determine the ending address for this external
93 * bank of SDRAM. We write to a max address with a data value and then disable
94 * row address bits looking for "don't care" locations. Each "don't care" bit
95 * represents a dividing of the maximum density (128M) by 2. By dividing the
96 * maximum of 32 4M chunks in an external bank down by all the "don't care" bits
97 * determined during sizing, we set the proper density.
100 * bp must be preserved because it is used for return linkage.
103 * nothing returned - but the memory subsystem is enabled
104 *******************************************************************************
111 .equ DRCCTL, 0x0fffef010 /* DRAM control register */
112 .equ DRCTMCTL, 0x0fffef012 /* DRAM timing control register */
113 .equ DRCCFG, 0x0fffef014 /* DRAM bank configuration register */
114 .equ DRCBENDADR, 0x0fffef018 /* DRAM bank ending address register */
115 .equ ECCCTL, 0x0fffef020 /* DRAM ECC control register */
116 .equ ECCINT, 0x0fffefd18 /* DRAM ECC nmi-INT mapping */
117 .equ DBCTL, 0x0fffef040 /* DRAM buffer control register */
119 .equ CACHELINESZ, 0x00000010 /* size of our cache line (read buffer) */
120 .equ COL11_ADR, 0x0e001e00 /* 11 col addrs */
121 .equ COL10_ADR, 0x0e000e00 /* 10 col addrs */
122 .equ COL09_ADR, 0x0e000600 /* 9 col addrs */
123 .equ COL08_ADR, 0x0e000200 /* 8 col addrs */
124 .equ ROW14_ADR, 0x0f000000 /* 14 row addrs */
125 .equ ROW13_ADR, 0x07000000 /* 13 row addrs */
126 .equ ROW12_ADR, 0x03000000 /* 12 row addrs */
127 .equ ROW11_ADR, 0x01000000 /* 11 row addrs/also bank switch */
128 .equ ROW10_ADR, 0x00000000 /* 10 row addrs/also bank switch */
129 .equ COL11_DATA, 0x0b0b0b0b /* 11 col addrs */
130 .equ COL10_DATA, 0x0a0a0a0a /* 10 col data */
131 .equ COL09_DATA, 0x09090909 /* 9 col data */
132 .equ COL08_DATA, 0x08080808 /* 8 col data */
133 .equ ROW14_DATA, 0x3f3f3f3f /* 14 row data (MASK) */
134 .equ ROW13_DATA, 0x1f1f1f1f /* 13 row data (MASK) */
135 .equ ROW12_DATA, 0x0f0f0f0f /* 12 row data (MASK) */
136 .equ ROW11_DATA, 0x07070707 /* 11 row data/also bank switch (MASK) */
137 .equ ROW10_DATA, 0xaaaaaaaa /* 10 row data/also bank switch (MASK) */
141 * initialize dram controller registers
147 movb %al, (%edi) /* disable write buffer */
150 movb %al, (%edi) /* disable ECC */
153 movb $0x1E,%al /* Set SDRAM timing for slowest */
157 * setup loop to do 4 external banks starting with bank 3
159 movl $0xff000000,%eax /* enable last bank and setup */
160 movl $DRCBENDADR, %edi /* ending address register */
163 movl $DRCCFG, %edi /* setup */
164 movw $0xbbbb,%ax /* dram config register for */
168 * issue a NOP to all DRAMs
170 movl $DRCCTL, %edi /* setup DRAM control register with */
171 movb $0x1,%al /* Disable refresh,disable write buffer */
173 movl $CACHELINESZ, %esi /* just a dummy address to write for */
176 * delay for 100 usec? 200?
177 * ******this is a cludge for now *************
181 loop sizdelay /* we need 100 usec here */
182 /***********************************************/
185 * issue all banks precharge
187 movb $0x2,%al /* All banks precharge */
192 * issue 2 auto refreshes to all banks
194 movb $0x4,%al /* Auto refresh cmd */
202 * issue LOAD MODE REGISTER command
204 movb $0x3,%al /* Load mode register cmd */
209 * issue 8 more auto refreshes to all banks
211 movb $0x4,%al /* Auto refresh cmd */
219 * set control register to NORMAL mode
221 movb $0x0,%al /* Normal mode value */
225 * size dram starting with external bank 3 moving to external bank 0
227 movl $0x3,%ecx /* start with external bank 3 */
232 * write col 11 wrap adr
234 movl $COL11_ADR, %esi /* set address to max col (11) wrap addr */
235 movl $COL11_DATA, %eax /* pattern for max supported columns(11) */
236 movl %eax, (%esi) /* write max col pattern at max col adr */
237 movl (%esi), %ebx /* optional read */
238 cmpl %ebx,%eax /* to verify write */
239 jnz bad_ram /* this ram is bad */
241 * write col 10 wrap adr
244 movl $COL10_ADR, %esi /* set address to 10 col wrap address */
245 movl $COL10_DATA, %eax /* pattern for 10 col wrap */
246 movl %eax, (%esi) /* write 10 col pattern @ 10 col wrap adr */
247 movl (%esi), %ebx /* optional read */
248 cmpl %ebx,%eax /* to verify write */
249 jnz bad_ram /* this ram is bad */
251 * write col 9 wrap adr
253 movl $COL09_ADR, %esi /* set address to 9 col wrap address */
254 movl $COL09_DATA, %eax /* pattern for 9 col wrap */
255 movl %eax, (%esi) /* write 9 col pattern @ 9 col wrap adr */
256 movl (%esi), %ebx /* optional read */
257 cmpl %ebx,%eax /* to verify write */
258 jnz bad_ram /* this ram is bad */
260 * write col 8 wrap adr
262 movl $COL08_ADR, %esi /* set address to min(8) col wrap address */
263 movl $COL08_DATA, %eax /* pattern for min (8) col wrap */
264 movl %eax, (%esi) /* write min col pattern @ min col adr */
265 movl (%esi), %ebx /* optional read */
266 cmpl %ebx,%eax /* to verify write */
267 jnz bad_ram /* this ram is bad */
269 * write row 14 wrap adr
271 movl $ROW14_ADR, %esi /* set address to max row (14) wrap addr */
272 movl $ROW14_DATA, %eax /* pattern for max supported rows(14) */
273 movl %eax, (%esi) /* write max row pattern at max row adr */
274 movl (%esi), %ebx /* optional read */
275 cmpl %ebx,%eax /* to verify write */
276 jnz bad_ram /* this ram is bad */
278 * write row 13 wrap adr
280 movl $ROW13_ADR, %esi /* set address to 13 row wrap address */
281 movl $ROW13_DATA, %eax /* pattern for 13 row wrap */
282 movl %eax, (%esi) /* write 13 row pattern @ 13 row wrap adr */
283 movl (%esi), %ebx /* optional read */
284 cmpl %ebx,%eax /* to verify write */
285 jnz bad_ram /* this ram is bad */
287 * write row 12 wrap adr
289 movl $ROW12_ADR, %esi /* set address to 12 row wrap address */
290 movl $ROW12_DATA, %eax /* pattern for 12 row wrap */
291 movl %eax, (%esi) /* write 12 row pattern @ 12 row wrap adr */
292 movl (%esi), %ebx /* optional read */
293 cmpl %ebx,%eax /* to verify write */
294 jnz bad_ram /* this ram is bad */
296 * write row 11 wrap adr
298 movl $ROW11_ADR, %edi /* set address to 11 row wrap address */
299 movl $ROW11_DATA, %eax /* pattern for 11 row wrap */
300 movl %eax, (%edi) /* write 11 row pattern @ 11 row wrap adr */
301 movl (%edi), %ebx /* optional read */
302 cmpl %ebx,%eax /* to verify write */
303 jnz bad_ram /* this ram is bad */
305 * write row 10 wrap adr --- this write is really to determine number of banks
307 movl $ROW10_ADR, %edi /* set address to 10 row wrap address */
308 movl $ROW10_DATA, %eax /* pattern for 10 row wrap (AA) */
309 movl %eax, (%edi) /* write 10 row pattern @ 10 row wrap adr */
310 movl (%edi), %ebx /* optional read */
311 cmpl %ebx,%eax /* to verify write */
312 jnz bad_ram /* this ram is bad */
314 * read data @ row 12 wrap adr to determine * banks,
315 * and read data @ row 14 wrap adr to determine * rows.
316 * if data @ row 12 wrap adr is not AA, 11 or 12 we have bad RAM.
317 * if data @ row 12 wrap == AA, we only have 2 banks, NOT 4
318 * if data @ row 12 wrap == 11 or 12, we have 4 banks,
320 xorw %di,%di /* value for 2 banks in DI */
321 movl (%esi), %ebx /* read from 12 row wrap to check banks
322 * (esi is setup from the write to row 12 wrap) */
323 cmpl %ebx,%eax /* check for AA pattern (eax holds the aa pattern) */
324 jz only2 /* if pattern == AA, we only have 2 banks */
328 movw $8,%di /* value for 4 banks in DI (BNK_CNT bit) */
329 cmpl $ROW11_DATA, %ebx /* only other legitimate values are 11 */
331 cmpl $ROW12_DATA, %ebx /* and 12 */
332 jnz bad_ram /* its bad if not 11 or 12! */
339 movl $ROW14_ADR, %esi /* set address back to max row wrap addr */
340 movl (%esi), %eax /* read actual number of rows @ row14 adr */
342 cmpl $ROW11_DATA, %eax /* row must be greater than 11 pattern */
345 cmpl $ROW14_DATA, %eax /* and row must be less than 14 pattern */
348 cmpb %ah,%al /* verify all 4 bytes of dword same */
355 * read col 11 wrap adr for real column data value
357 movl $COL11_ADR, %esi /* set address to max col (11) wrap addr */
358 movl (%esi), %eax /* read real col number at max col adr */
360 * validate column data
362 cmpl $COL08_DATA, %eax /* col must be greater than 8 pattern */
365 cmpl $COL11_DATA, %eax /* and row must be less than 11 pattern */
368 subl $COL08_DATA, %eax /* normalize column data to zero */
370 cmpb %ah,%al /* verify all 4 bytes of dword equal */
377 * merge bank and col data together
379 addw %di,%dx /* merge of bank and col info in dl */
381 * fix ending addr mask based upon col info
384 subb %dh,%al /* dh contains the overflow from the bank/col merge */
385 movb %bl,%dh /* bl contains the row mask (aa, 07, 0f, 1f or 3f) */
386 xchgw %cx,%ax /* cx = ax = 3 or 2 depending on 2 or 4 bank device */
388 incb %dh /* ending addr is 1 greater than real end */
389 xchgw %cx,%ax /* cx is bank number again */
391 * issue all banks precharge
394 movl $DRCCTL, %esi /* setup DRAM control register with */
395 movb $0x2,%al /* All banks precharge */
397 movl $CACHELINESZ, %esi /* address to init read buffer */
401 * update ENDING ADDRESS REGISTER
403 movl $DRCBENDADR, %edi /* DRAM ending address register */
408 * update CONFIG REGISTER
428 movl $DRCBENDADR, %edi /* DRAM ending address register */
433 * set control register to NORMAL mode
435 movl $DRCCTL, %esi /* setup DRAM control register with */
436 movb $0x0,%al /* Normal mode value */
438 movl $CACHELINESZ, %esi /* address to init read buffer */
443 movl $DRCBENDADR, %edi /* DRAM ending address register */
463 #if defined CFG_SDRAM_DRCTMCTL
464 /* just have your hardware desinger _GIVE_ you what you need here! */
466 movb $CFG_SDRAM_DRCTMCTL,%al
469 #if defined(CFG_SDRAM_CAS_LATENCY_2T) || defined(CFG_SDRAM_CAS_LATENCY_3T)
470 /* set the CAS latency now since it is hard to do
471 * when we run from the RAM */
472 movl $DRCTMCTL, %edi /* DRAM timing register */
474 #ifdef CFG_SDRAM_CAS_LATENCY_2T
477 #ifdef CFG_SDRAM_CAS_LATENCY_3T
483 movl $DRCCTL, %edi /* DRAM Control register */
484 movb $0x3,%al /* Load mode register cmd */
489 movl $DRCCTL, %edi /* DRAM Control register */
490 movb $0x18,%al /* Enable refresh and NORMAL mode */
502 /* readback DRCBENDADR and return the number
503 * of available ram bytes in %eax */
505 movl $DRCBENDADR, %edi /* DRAM ending address register */
509 andl $0x80000000, %ecx
511 andl $0x7f000000, %eax
515 bank2: movl (%edi), %eax
517 andl $0x00800000, %ecx
519 andl $0x007f0000, %eax
523 bank1: movl (%edi), %eax
525 andl $0x00008000, %ecx
527 andl $0x00007f00, %eax
531 bank0: movl (%edi), %eax
533 andl $0x00000080, %ecx
535 andl $0x0000007f, %eax
543 #if CFG_SDRAM_ECC_ENABLE
544 /* A nominal memory test: just a byte at each address line */
559 /* clear all ram with a memset */
567 /* enable read, write buffers */
571 /* enable NMI mapping for ECC */
584 #endif /* CONFIG_SC520 */