Variable "row_density" is no longer used. Drop it from DIMM structure.
Signed-off-by: York Sun <york.sun@nxp.com>
pdimm->n_banks_per_sdram_device = spd->nbanks;
pdimm->edc_config = spd->config;
pdimm->burst_lengths_bitmask = spd->burstl;
- pdimm->row_density = spd->bank_dens;
/*
* Calculate the Maximum Data Rate based on the Minimum Cycle time.
pdimm->n_banks_per_sdram_device = spd->nbanks;
pdimm->edc_config = spd->config;
pdimm->burst_lengths_bitmask = spd->burstl;
- pdimm->row_density = spd->rank_dens;
/*
* Calculate the Maximum Data Rate based on the Minimum Cycle time.
* BL8 -bit3, BC4 -bit2
*/
pdimm->burst_lengths_bitmask = 0x0c;
- pdimm->row_density = __ilog2(pdimm->rank_density);
/* MTB - medium timebase
* The unit in the SPD spec is ns,
* BL8 -bit3, BC4 -bit2
*/
pdimm->burst_lengths_bitmask = 0x0c;
- pdimm->row_density = __ilog2(pdimm->rank_density);
/* MTB - medium timebase
* The MTB in the SPD spec is 125ps,
DIMM_PARM(n_banks_per_sdram_device),
#endif
DIMM_PARM(burst_lengths_bitmask),
- DIMM_PARM(row_density),
DIMM_PARM(tckmin_x_ps),
DIMM_PARM(tckmin_x_minus_1_ps),
unsigned int n_banks_per_sdram_device;
#endif
unsigned int burst_lengths_bitmask; /* BL=4 bit 2, BL=8 = bit 3 */
- unsigned int row_density;
/* used in computing base address of DIMMs */
unsigned long long base_address;